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| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability TC = 25C, Note 1 TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C IXFE 80N50 VDSS ID25 RDS(on) = 500 V = 72 A = 55 m D G S S Maximum Ratings 500 500 20 30 72 320 80 64 6 5 580 -40 ... +150 150 -40 ... +150 2500 3000 V V V V A ISOPLUS 227TM (IXFE) S G S A A mJ J V/ns W C C C V~ V~ Features G = Gate S = Source D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source *Conforms to SOT-227B outline *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 19 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2 4 200 TJ = 25C TJ = 125C 100 2 55 V V nA A mA m * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = IT Note 2 Advantages * Low cost * Easy to mount * Space savings * High power density (c) 2002 IXYS All rights reserved 98898A (5/02) IXFE 80N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 50 70 9890 VGS = 0 V, VDS = 25 V, f = 1 MHz 1750 460 61 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT RG = 1 (External), 70 102 27 380 VGS = 10 V, VDS = 0.5 * VDSS, ID = IT 80 173 0.22 0.07 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; ID = IT, Note 2 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 80 320 1.3 250 1.2 8 A A V ns C A IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s, VR = 100 V Please see IXFN80N50 data sheet for characteristic curves. Notes: 1. Pulse width limited by TJM. 2. Pulse test, t 300 ms, duty cycle d 2%. 3. IT Test current: IT = 40 A IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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